Low Resistance Gold Contacts for Gallium Nitride

Green Method for Synthesizing Gallium Nitride Nanostructures at Low Temperature

Gallium nitride (GaN) nanostructures (NS) were synthesized using pulseddirect current plasma enhanced chemical vapor deposition (PDC-PECVD) on quartzsubstrate at low temperature (600°C). Gallium metal (Ga) and nitrogen (N) plasma wereused as precursors. The morphology and structure of the grown GaN NS werecharacterized by field emission scanning electron microscope (FE-SEM), transmissionelectro...

Neutron irradiation effects on metal-gallium nitride contacts

Gallium Nitride Photoconductive Detectors

Since 1994, the Applied Physics Laboratory has been collaborating with NASA Goddard Space Flight Center to develop photodetectors based on gallium nitride and aluminum gallium nitride material produced in the Milton S. Eisenhower Research and Technology Development Center. This article describes the results of our collaboration and highlights the development of gallium nitride photodetectors wi...

Unusually low thermal conductivity of gallium nitride nanowires

We report measurements of thermal conductivity κ on individual gallium nitride nanowires (GaN NWs) with diameters ranging from 97 to 181 nm grown by thermal chemical vapor deposition. We observed unexpectedly small kappa values, in the range of 13–19 W/m K at 300 K, with very weak diameter dependence. We also observe unusual power law κ~Tn behavior with n=1.8 at low temperature. Electronenergy-...

Ultra-low threshold gallium nitride photonic crystal nanobeam laser

GaN-based materials are well-recognized for their exceptional optical qualities, particularly in the blue and UV parts of the spectrum. In addition, their wide bandgaps allow efficient operation at room temperature and higher. This work will describe the room-temperature performance of optically-pumped GaN photonic crystal (PC) nanobeam lasers, with thresholds as low as 9.1 μJ/cm2, the lowest r...